@article{10902/16590,
year = {2019},
month = {6},
url = {http://hdl.handle.net/10902/16590},
abstract = {This paper presents and discusses the careful modeling of a Zero Biased Diode, including low-frequency noise sources, providing a global model compatible with both wire bonding and flip-chip attachment techniques. The model is intended to cover from DC up to W-band behavior, and is based on DC, capacitance versus voltage, as well as scattering and power sweep harmonics measurements. Intensive use of 3D EM (ElectroMagnetic) simulation tools, such as HFSSTM, was done to support Zero Biased Diode parasitics modeling and microstrip board modeling. Measurements are compared with simulations and discussed. The models will provide useful support for detector designs in the W-band.},
organization = {This research was funded by the Spanish Ministry of Economy, Science and Innovation for the financial support provided through projects CONSOLIDER-INGENIO CSD2008-00068 (TERASENSE), the continuing excellence network SPATEK and the projects TEC2014-58341-C4-1-R and TEC2017-83343-C4-1-R.},
publisher = {MDPI},
publisher = {Electronics, 2019, 8(6), 696},
title = {Accurately modeling of Zero Biased Schottky-Diodes at millimeter-wave frequencies},
author = {Gutiérrez Asueta, Jéssica and Zeljami, Kaoutar and Fernández Ibáñez, Tomás and Pascual Gutiérrez, Juan Pablo and Tazón Puente, Antonio},
}