@article{10902/15866,
year = {2019},
month = {4},
url = {http://hdl.handle.net/10902/15866},
abstract = {The performance of silicon-germanium (SiGe) transistors under cryogenic operation is analysed. The design and characterization of a 3–14 GHz low-noise amplifier (LNA) using SiGe transistors at 300 K and at 13 K are presented. A three stage amplifier is implemented with bipolar transistors model BFU910F from NXP commercially available with a plastic package. The amplifier exhibits 36.8 dB average gain with average noise temperature of 103 K and 42 mW DC power consumption at 300 K ambient temperature. Whereas cooled down to 13 K ambient temperature, it provides 32.4 dB average gain, 11.4 K average noise temperature with a minimum of 7.2 K at 3.5 GHz and a DC power dissipation of 5.8 mW. The presented LNA demonstrates an outstanding performance at cryogenic temperature for a commercial plastic packaged transistor.},
organization = {The authors would like to thank the Spanish Ministry of Economy, Industry and Competitiveness for the financial support provided under the grant ESP2015-70646-C2-2-R.},
publisher = {Elsevier},
publisher = {Cryogenics, 2019, 99, 18-24},
title = {Cryogenic performance of a 3-14 GHz bipolar SiGe low-noise amplifier},
author = {Aja Abelán, Beatriz and Villa Benito, Enrique and Fuente Rodríguez, Luisa María de la and Artal Latorre, Eduardo},
}