@conference{10902/15601,
year = {2018},
url = {http://hdl.handle.net/10902/15601},
abstract = {This paper presents the design and the performance of a six stage GaAs MMIC distributed amplifier (DA) for optical driver applications. The DA is fabricated in a commercially available 0.15 μm GaAs p-HEMT technology. The amplifier exhibits 13 dB of small gain over 40 GHz of 3 dB bandwidth with a power consumption equal to 550 mW. Group delay time variation up to 30 GHz is only ±7 ps. The output power is higher than 16 dBm (4 V pp ), which makes the circuit suitable as a preamplifier for lithium-niobate (LiNb03) optical modulator driver. The DA is demonstrated as a part of the modulator driver in a 12.5 GBps PAM-4 (25Gbps) optical system by using the eye diagram as a figure of merit.},
organization = {This work was supported in part by the Spanish Ministry of Economy and Competitiveness and the European Regional Development Fund (ERDF/FEDER) under research projects TEC2014-60283-C3-1-R and TEC2017-88242-C3-1-R, and in part by the French company Vectrawave through the project SOPA (Support On Power Amplifier design).},
publisher = {IEEE},
publisher = {48th European Microwave Conference (EuMC), Madrid, 2018, 1517-1520},
publisher = {15th European Radar Conference (EuRAD), Madrid, 2018, 497-500},
title = {A DC to 40 GHz, high linearity monolithic GaAs distributed amplifier with low DC power consumption as a high bit-rate pre-driver},
author = {Diego Arroyo, Laura and Haentjens, Benoît and Mjema, Charles Alphonce and Barrutia Inza, Iban and Herrera Guardado, Amparo and Haentjens, Yan},
}