@conference{10902/13421,
year = {2017},
url = {http://hdl.handle.net/10902/13421},
abstract = {This paper reviews the use of UHF double class-E (class-E2) topologies for dc/dc power conversion. After introducing this attractive resonant converter in the context of the time-reversal duality principle, two different lumped-element networks are described for appropriately terminating the drain of the switching devices. Recent implementation examples, taking advantage of GaN HEMT processes, are then presented. The potential for a fast dynamic response is validated (with a slew rate over 2 V/nS), while also the feasibility for an appropriate operation without requiring external RF gate driving signals. A solution for approximating a load-insensitive operation is finally exposed.},
publisher = {IEEE},
publisher = {IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), Miami, Florida, 2017, 80-83},
title = {UHF power conversion with GaN HEMT class-E2 topologies},
author = {García García, José Ángel and Ruiz Lavín, María de las Nieves and Vegas Bayer, David and Pampín González, María and Mediavilla Sánchez, Ángel},
}