@conference{10902/12383,
year = {2017},
url = {http://hdl.handle.net/10902/12383},
abstract = {This paper reviews the use of the class-E topology for RF-to-DC and DC-to-DC power conversion. After covering its early history, the class-E rectifier is introduced in the context of the time-reversal duality principle, to be then integrated with an inverter in a class-E2 DC/DC converter. Recent examples and applications at UHF and microwave bands are finally presented. A review of RF rectifiers based on Schottky diodes or FET transistors, is followed by a discussion of synchronous and self-synchronous implementations of the double class-E DC/DC converter, using advanced GaN HEMT transistors.},
organization = {This work was supported in part by the Spanish Ministry of Economy and Competitiveness (MINECO) under project TEC2014-58341-C4-1-R, co-funded with FEDER, and in part by the Advanced Research Projects Agency-Energy (ARPA-E), U.S. Department of Energy, under Award Number DEAR0000216 and the DARPA MPC program, ONR award N00014-11-1-0931.},
publisher = {IEEE},
publisher = {IEEE MTT-S International Microwave Symposium (IMS), Honolulu, Hawai, 2017, 1327-1330},
title = {Class-E rectifiers and power converters},
author = {García García, José Ángel and Popovic, Zoya},
}