@conference{10902/11132,
year = {2016},
url = {http://hdl.handle.net/10902/11132},
abstract = {This work presents a methodology to design highefficient dual-band RF power amplifiers. Using the non-linear model of the selected GaN HEMT device, an analysis of the performance of the transistor to changes in the phases of both the second and the third harmonic has been carried out for both frequencies. Based on this analysis, drain terminating and biasing networks are designed to provide near optima impedance values at the fundamental and higher order harmonics to the selected frequency bands. The experimental characterization of the implemented prototype, which operates at 1.8 GHz and 2.6 GHz, can achieve drain efficiencies around 70 % with output power levels greater than 42 dBm in both frequency bands. Furthermore, PAEs obtained are very close to drain efficiencies after dual-band input matching.},
organization = {Este trabajo ha sido financiado por el Gobierno de Espana bajo los proyectos TEC2014-58341-C4-1-R y TEC2014-58341-C4-2-R del MINECO, por el FEDER, por el FSE, a
través de la beca FPI del MINECO del primer autor (BES-2012-061813). Además, el primer autor agradece la beca de movilidad predoctoral del MINECO (EEBB-I-15-10447)},
publisher = {URSI 2016, XXXI Simposium Nacional de la Unión Científica Internacional de Radio, Madrid},
title = {Amplificador de potencia doble-banda (1.8 GHz y 2.6 GHz) con alta eficiencia},
author = {Pérez Cisneros, José Ramón and García García, José Ángel and Ruiz Lavín, María de las Nieves and Mingo Sanz, Jesús de and Pampín González, María and Vegas Bayer, David and Carro Ceballos, Pedro Luis and García Dúcar, María Paloma},
}