@conference{10902/10230,
year = {2015},
url = {http://hdl.handle.net/10902/10230},
abstract = {Modern communication and radar systems show an increasing demand for robust ultra-broadband amplifiers for low-noise applications. A set of three different 0.5 GHz to 20 GHz MMIC LNAs using a GaN HEMT technology with a gate length of 0.25 μm was designed and fabricated, each with a noise figure between 3 dB and 7 dB over frequency. Two designs with four and five FET cells feature approx. 10 dB and 11 dB broadband gain, while a third MMIC with a chain connection of both figures more than 20 dB of gain. A distributed active drain bias circuit substitutes large area or off-chip inductor structures and enables a full-MMIC chain connection of both TWA stages.},
publisher = {IEEE},
publisher = {10th European Microwave Integrated Circuits Conference (EuMIC), Paris, France, 2015, 156-159},
title = {Broadband low-noise GaN HEMT TWAs using an active distributed drain bias circuit},
author = {Van Raay, Friedbert and Quay, Rüdiger and Aja Abelán, Beatriz and Moschetti, Giuseppe and Seelmann-Eggebert, Matthias and Schlechtweg, Michael and Ambacher, Oliver},
}