@conference{10902/10185,
year = {2014},
url = {http://hdl.handle.net/10902/10185},
abstract = {In this paper, a dual-band outphasing transmitter (able of operating either at 770 MHz or 960 MHz frequency bands) is presented. Two broadband RF power amplifiers (PAs) have been designed over packaged GaN HEMT devices, switching close to the nominal zero-voltage and zero-voltage-derivative class E conditions. A reactive combiner, using transmission lines of appropriate electrical lengths at both bands, together with compensating reactances, allows positioning the drain impedance loci to produce high efficiency and good dynamic range profiles. Average drain efficiency figures over 68% and 38% have been measured for WCDMA signals with a peak-to-average power ratio (PAPR) of 5.1 dB and 8.4 dB, respectively.},
organization = {This work was supported by MINECO through projects TEC2011-29126-C03 (-01, co funded with FEDER, and -02), and Consolider CSD2008-00068.},
publisher = {IEEE},
publisher = {International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMiC), Leuven, Belgium, 2014.},
title = {A dual-band outphasing transmitter using broadband class E power amplifiers},
author = {Ruiz Lavín, María de las Nieves and Marante Torres, Reinel and Rizo Salas, Leysi and García García, José Ángel and Gilabert Pinal, Pere Lluís and Montoro López, Gabriel},
}