@conference{10902/10127,
year = {2015},
url = {http://hdl.handle.net/10902/10127},
abstract = {Parametric hysteresis in power amplifiers is investigated, studying the causes of this phenomenon and providing an efficient methodology for its prediction and elimination. As will be demonstrated, in MESFET and HEMT devices it is caused by a nonlinear resonance of the device input capacitance under near optimum input matching conditions. Bifurcation loci are used to evaluate the impact of the phenomenon under variation of critical design parameters. All the tests have been carried out in a Class -E GaN PA with measured 86.8% PAE and 12.4W output power at 0.9 GHz.},
organization = {This work was supported by the Spanish Ministry of Economy and Competitiveness under Contract TEC2011- 29264-C03-01 and FEDER co-funded Contract TEC2011- 29126-C03-01, and by the Predoctoral Fellowship for Researchers in Training of the University of Cantabria and the Regional Ministry of Education of the Government of Cantabria.},
publisher = {IEEE},
publisher = {IEEE MTT-S International Microwave Symposium (IMS), Phoenix, Arizona, 2015, 432-435},
title = {Parametric hysteresis in power amplifiers},
author = {Cos Pérez, Jesús de and Suárez Rodríguez, Almudena and García García, José Ángel},
}